منابع مشابه
Growth of an Ordered Crystalline Organic Heterojunction**
Organic semiconductors have gained tremendous attention over the last two decades due to their potential for use in thin film transistors (TFTs), sensors, solar cells and organic light emitting diodes The best device performances (particularly for TFTs) have often been achieved using free standing single crystals. However, in general the size, thickness, and shape of such crystals are not easil...
متن کاملControlled growth of ordered nanopore arrays in GaN.
High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications. Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying (0001)-oriented GaN film through openings in a SiN(x) template that are milled by a focused io...
متن کاملGrowth and photoelectrochemical properties of ordered CuInS2 nanorod arrays.
CuInS(2) nanorod array structures are synthesized via a template-free and non-vacuum route for the first time. The obtained CuInS(2) thin films show promising conversion efficiency in a two-electrode photoelectrochemical cell.
متن کاملThe growth of silver on an ordered alumina surface.
The growth of Ag on an ordered Al2O3 surface was studied by low energy ion scattering spectroscopy (LEIS), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and temperature programmed desorption (TPD). Three-dimensional (3D) growth of Ag clusters was observed with STM and LEIS, with the cluster size increasing with Ag coverage. The XPS core level binding energies and ...
متن کاملGrowth and decomposition of aligned and ordered PdO nanoparticles.
The formation, thermal decomposition, and reduction of small PdO particles were studied by high-resolution transmission electron microscopy and selected area electron diffraction. Well-defined Pd particles (mean size of 5-7 nm) were grown epitaxially on NaCl (001) surfaces and subsequently covered by a layer of amorphous SiO2 (25 nm), prepared by reactive deposition of SiO in 10(-2) Pa O2. The ...
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ژورنال
عنوان ژورنال: Nature
سال: 1990
ISSN: 0028-0836,1476-4687
DOI: 10.1038/346711b0